- Equipped with our patented dual expansion chamber design for high etch rates
- Allows for high XeF2 gas flow and pressure without dilution from carrier gases
- Provides both pulsed and continuous flow etch processes
- Unique expansion chamber based design contributes to precise, repeatable pulse pressure and ease of mixing XeF2 with other gases
- Customizable chamber size can be matched to the wafer size resulting in maximized etch rates, uniformity and efficiency
- Easy to use, reliable and safe
