The Xenon Difluoride Etching
Solutions Company™
       
 

Xetch X3™ Specifications


Patent pending

Silicon etch rates
The etch rate is very dependant on the feature size and amount of silicon to be etched. Etch rates as high as 10 um per minute on small parts are achievable, with lower rates on large wafers. The X3 Series Xetch routinely achieves the following resutls:

  • On a 6" Si wafer with 90% exposed area, etch rates better than 2 microns of Si in 20 minutes.
  • On a 4" Si wafer with 10% exposed area, etch rates better than 1 micron per minute.
Amount of silicon consumed per charge
The amount of silicon consumed per charge depends on the exposed silicon surface area and the utilization of the XeF2 during the etch process. (The utilization is the percentage of XeF2 which actually reacts with the silicon during the etch). If XeF2 is brought into a chamber containing a Si wafer, and flushed out before it has completely reacted with the wafer, the utilization would be low. If the XeF2 is left in the chamber for an extended period of time, the highest utilization of XeF2 would be obtained.

Following the formula:
2XeF2+Si => 2Xe + SiF4

The amount of silicon consumed per gram of XeF2 is calculated. For a 4-inch wafer, assuming the entire top surface is being etched (usually the majority of the wafer is masked), 1 gram of XeF2 will etch about 2 um of silicon. If only 10% of the wafer was being etched, 1 gram of XeF2 would etch approximately 20 um of silicon. The Xetch is set up so that one may fit two, 2000 grams bottles of XeF2 in the system (bottles are easy to change).

System Geometry
The Xetch® X3 is delivered in its standard configuration with two xenon difluoride expansion chambers and the provision for the installation of two xenon difluoride source bottles (not included with the system).

Wafer capacity
The Xetch® is designed to be manually loaded for superior substrate geometry flexibility. This flexibility is a key feature since it allows the easy processing of MEMS devices ranging from die sized devices, very fragile or thin substrates, and stanfard full wafers.

Wafer size limitations
The unit comes in two versions, a system which is optimized for 6" wafers or smaller parts and a system which is optimized for 8" wafers or smaller parts.

Software Control


The unit comes ready to use with a friendly software interface controlled from a touch screen display. The Xetch® software may be run in one of three operating modes that can be used during an etch. Only one operating mode (Normal) is included with the system. The others are optional upgrades.

  • The normal mode (included at delivery): utilizes a pulsed etch with a set xenon difluoride pressure and etch time.
  • An advanced normal etch mode (optional upgrade): allows for the user to set the default base pressure between cycles.
  • The flow through mode (optional upgrade): creates a continuous flow of xenon difluoride.

Imaging Upgrade
The Xetch can be upgraded with an imaging system that includes a camera system, fully interfaced to the control computer. The control software is upgraded so that part of the touch screen shows images of the sample under etch.

Ethernet Control Upgrade
The Xetch can be upgraded to be monitored and/or controlled from a remote computer hooked up through an ethernet network.

Utility requirements

  • 100-120 Volt AC/ 20 Amps for system excluding vacuum pump, which requires 10A
  • Nitrogen lines for process N2, vent N2, and gas box purge N2: 10-20 psi
  • Compressed Dry Air: 70-100 psi
  • Fume exhaust from roughing pump, gas box, and chamber ventilation shroud

Dimensions and Weight

  • System Frame: 80cm wide X 60cm deep X 175cm high
  • Height to top of LCD monitor 66"
  • Weight approximately 500 lbs

Warranty and installation

  • 1-year parts and labor
  • Free software updates for one year from acceptance.
  • Installation is included in the system price
  • Installation takes 1 day, and 1 further day for operator training is also included in the system price.
  • Final Verification Test at the Customer’s Site

Last Updated September 11, 2006

 
 
 
 
 

 


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