Xetch
e1™ Spec's
Amount of silicon consumed per charge
The
amount of silicon consumed per charge depends on the exposed
silicon surface area and the utilization of the XeF2 during
the etch process. (The utilization is the percentage of XeF2
which actually reacts with the silicon during the etch). If
XeF2 is brought into a chamber containing a Si wafer, and flushed
out before it has completely reacted with the wafer, the utilization
would be low. If the XeF2 is left in the chamber for an extended
period of time, the highest utilization of XeF2 would be obtained.
Following
the formula:
2XeF2+Si
=> 2Xe + SiF4
The
amount of silicon consumed per gram of XeF2 is calculated.
For
a 4-inch wafer, assuming the entire top surface is being etched
(usually the majority of the wafer is masked), 1 gram of
XeF2
will etch about 2 um of silicon. If only 10% of the wafer was
being etched, 1 gram of XeF2 would etch approximately 20
um
of silicon. The Xetch e1 is set up to fit a
600 grams bottle of XeF2 in the system (bottle is easy
to
change).
System
Geometry
The
Xetch e1 is delivered in its standard configuration
with one xenon difluoride expansion chamber and the provision
for the
installation of one xenon difluoride source bottle (not included
with the system).
Wafer capacity
The
Xetch e1 is designed to be manually loaded for superior
substrate geometry flexibility. This flexibility is a key
feature since
it allows the easy processing of MEMS devices ranging from
die sized devices, very fragile or thin substrates, and stanfard
full wafers.
Wafer
size limitations
The
Xetch e1 is designed to accomodate 6" wafers
or smaller parts..
Software
Control
The
Xetch e1 comes ready to use with a friendly software
interface. The Xetch® software may be
run in one of three operating modes that can be used during
an etch. Only one operating mode (Normal) is included with
the system. The others are optional upgrades.
- The
Standard Pulse mode (included at delivery): utilizes
a pulsed etch
with a set xenon difluoride pressure and etch time.
-
A Rapid Pulse mode (optional upgrade): allows for
the user to set the default base pressure between cycles.
Imaging
Upgrade
The
Xetch e1 can be upgraded with an imaging system that includes
a
camera system, fully interfaced to the control computer.
The control software is upgraded so that part of the touch
screen
shows images of the sample under etch.
Utility
requirements
- 100-120
Volt AC/ 20 Amps for system including vacuum pump
- Nitrogen
lines for process N2 and gas box purge N2: 10-20
psi
- Compressed
Dry Air: 70-100 psi
- Fume
exhaust from roughing pump, gas box, and chamber ventilation
shroud
Dimensions
and Weight
- System
dimensions (not including PC or pump): 64cm wide X 61cm
deep X 82cm high
- Weight
approximately 100 kg
Warranty
and installation
- 1-year
parts and labor
- Free
software updates for one year from acceptance.
Last
Updated August 3, 2005
